Preparation of tungsten disulfide nanosheets has attracted more and more attention from scholars with the popularization of tungsten disulfide. For example, some experts have synthesized atomically thin transition-metal tungsten disulfide (WS2) with layer controllability and large-area uniformity, which is an essential requirement for its application in electronic and optical devices.
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The experts described a process for the preparation of tungsten disulfide nanosheets through the sulfurization of an atomic layer deposition WO3 film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the atomic layer deposition-based WS2 nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a ding of the number of layers. The electron mobility of the monolayer WS2 measured using a field-effect transistor with a high-k dielectric gate insulator is shown to be better than that of chemical vapor deposition-grown WS2, and the subthreshold swing is comparable to that of an exfoliated MoS2 field-effect transistor device. Moreover, by utilizing the high conformality of the atomic layer deposition process, the experts have developed a process for the fabrication of WS2 nanotubes.
